| Шығарылым | 
	Бөлім | 
        Атауы | 
	Файл | 
											
				| Том 53, № 1 (2024) | 
		TECHNOLOGIES | 
		Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node | 
		
					 | 
		
												
				| Том 52, № 5 (2023) | 
		INSTRUMENTATION | 
		Neuromorphic Systems: Devices, Architecture, and Algorithms | 
		
					 | 
		
												
				| Том 52, № 2 (2023) | 
		ЛИТОГРАФИЯ | 
		Cross Sections of Scattering Processes in Electron-Beam Lithography | 
		
					 | 
		
												
				| Том 52, № 2 (2023) | 
		INSTRUMENTATION | 
		Oxide Memristors for ReRAM: Approaches, Characteristics, and Structures | 
		
					 | 
		
												
				| Том 54, № 1 (2025) | 
		MODELING | 
		Calculation of distributions of electron beam energy absorbed in PMMA and Si using various scattering models | 
		
					 | 
		
												
				| Том 54, № 2 (2025) | 
		NANOSTRUCTURES | 
		Electrical characteristics of ruthenium lines with a cross-sectional area less than 1000 nm2 | 
		
					 | 
		
												
				| Том 54, № 2 (2025) | 
		INSTRUMENTATION | 
		Ferroelectric transistors: operating principles, materials, applications | 
		
					 | 
		
												
				| Том 54, № 3 (2025) | 
		DIAGNOSTICS | 
		Structure of thin titanium nitride films deposited by magnetron sputtering | 
		
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