Наноиндентирование гибридных кристаллов нано-SiC/Si и тонких пленок AlN, AlGaN, GaN, Ga2O3 на нано-SiC/Si

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Аннотация

В обзоре приводится систематизация и анализ экспериментальных данных по наноиндентированию (НИ) целого класса новых материалов – широкозонных гетероструктур AlN, GaN, AlGaN и β-Ga2O3, сформированных на гибридной подложке нового типа SiC/Si, которые синтезированы методом согласованного замещения атомов. Подробно описаны деформационные и механические свойства исследованных материалов. Описывается методика проведения НИ, анализируются и достоинства, и недостатки метода НИ. Приводится описание аппаратуры, с помощью которой были выполнены эксперименты по НИ. Излагаются основные положения новой модели описания деформационных свойств наномасштабной жесткой двухслойной структуры на пористом упругом основании. Приведено описание оригинального метода визуализации остаточной (после механического взаимодействия) деформации в прозрачных и полупрозрачных материалах. Приведены экспериментально определенные значения модулей упругости и твердости наномасштабных слоев SiC на Si, сформированных методом согласованного замещения на трех основных кристаллических плоскостях Si, а именно (100), (110) и (111), и упругих модулей и характеристик (модуль упругости, твердость, прочность) поверхностных слоев полупроводниковых гетероструктур AlN/SiC/Si, AlGaN/SiC/Si, AlGaN/AlN/SiC/Si, GaN/SiC/Si и GaN/AlN/SiC/Si, выращенных на гибридных подложках SiC/Si. Приводится описание уникальных механических свойств нового материала β-Ga2O3, сформированного на слоях SiC, выращенных на поверхностях Si ориентаций (100), (110) и (111).

Об авторах

А. С. Гращенко

Институт проблем машиноведения РАН

Автор, ответственный за переписку.
Email: asgrashchenko@bk.ru
Россия, Санкт-Петербург

С. А. Кукушкин

Институт проблем машиноведения РАН

Email: sergey.a.kukushkin@gmail.com
Россия, Санкт-Петербург

А. В. Осипов

Институт проблем машиноведения РАН

Email: asgrashchenko@bk.ru
Россия, Санкт-Петербург

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