Designing and manufacturing of fractal elements based on a resistance-capacitance medium

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Abstract

This work presents the experience of designing and manufacturing of fractal elements (FE) based on resistance capacitance media, in particular, based on a one-dimensional structurally uniform resistance-capacitance element with distributed parameters (RC-EDP) with R-C-NR (R-C-NR ЭРП) kind of a layer structure. It also presents the results of designing and manufacturing of thick film FE samples having constant phase of impedance –10°, –20°, –30° and –40° in the frequences range of 1.5 decade order. It gives the results of the comparative analysis of phase-frequency characteristics of the input impedance of the synthesized model and the manufactured sample.

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About the authors

A. Kh. Gil’mutdinov

Kazan National Research Technical University named after A.N. Tupolev – KAI (KNITU-KAI); Scientific and Production Association “Radioelectronics” named after V.I. Shimko

Author for correspondence.
Email: agilmutdinov@rambler.ru
Russian Federation, K. Marks Str., 10, Kazan, 420111; Zhurnalistov Str., 50, Kazan, 420029

K. O. Maksimov

Izhevsk State Technical University named after M.T. Kalashnikov

Email: agilmutdinov@rambler.ru
Russian Federation, Studencheskaya Str., 7, Izhevsk, 426069

P. A. Ushakov

Izhevsk State Technical University named after M.T. Kalashnikov

Email: agilmutdinov@rambler.ru
Russian Federation, Studencheskaya Str., 7, Izhevsk, 426069

References

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Supplementary files

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2. Fig. 1. Basic design for the implementation of PV based on the R-C-NR ERP: a – layer structure; b – UGO of the i-th CRE; 1…4 – designations of the terminal numbers of the RCGNR structure, 1-i…4-i – designations of the terminal numbers of the i-th CRE.

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3. Fig. 2. Universal equivalent circuit of the elementary section ∆x FE OO R-C-NR ERP.

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4. Fig. 3. Results of the FE synthesis program operation at the impedance phase-frequency response constancy level of -30°: a - dialog box with the FE synthesis result; b - equivalent circuit of the synthesized FE corresponding to the “RCGNR structure topology” field of the dialog box; c - graph of the input impedance phase-frequency response of the synthesized FE.

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5. Fig. 4. Photo of the substrate with thick-film PV elements and control elements.

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6. Fig. 5. Phase-frequency characteristics of the input impedance of the FE with different φZin = φZ±∆φZ: –10°±1.5° (a), –20°±2° (b), –30°±2° (c) –40°±2° (d), for the synthesized model (1) and measured for the sample (2).

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7. Fig. 6. Fractal element based on the R-C-NR ERP with phase constancy φZвх = –30°: a – topological drawing; b – photo of the manufactured sample; 1 – conductors with contacts to the lower resistive layer (R layer), 2 – conductors with contacts to the upper resistive layer, 3 – upper resistive layer (NR layer), 4 – gaps in the upper resistive layer.

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8. Fig. 7. Equivalent circuit of the manufactured PV sample with phase constancy φZвх = –30° (Fig. 6b), made in OrCAD.

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9. Fig. 8. The FE model in the OrCAD program, similar to the equivalent circuit of the synthesized FE (see Fig. 3b).

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10. Fig. 9. Phase-frequency characteristics of the input impedance of the FE with a phase constancy of -30°, obtained in the OrCAD program for the model shown in Fig. 8 (1) and 7 (2), as well as measured (3) for the manufactured sample (see Fig. 5c).

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