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Non-equilibrium processes in a semiconductor laser based on AlAs/(Al,Ga)As/GaAs microcavity under electric pulses excitation
- Authors: Maksimov A.A.1, Filatov E.V.1, Filatov V.V.2, Tartakovskii I.I.1
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Affiliations:
- Institute of Solid State Physics of the Russian Academy of Sciences
- Semenov Federal Research Center of Chemical Physics, Branch in Chernogolovka
- Issue: Vol 87, No 2 (2023)
- Pages: 182-188
- Section: Articles
- URL: https://jdigitaldiagnostics.com/0367-6765/article/view/654475
- DOI: https://doi.org/10.31857/S036767652270034X
- EDN: https://elibrary.ru/AEHGMI
- ID: 654475
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Abstract
Stimulated radiation with a high circular polarization degree in chiral semiconductor microcavities was studied in a wide temperature range. The kinetics of the spectra emission rearrangement in injection laser nanostructures during the action of a rectangular electric excitation pulse is studied in detail.
About the authors
A. A. Maksimov
Institute of Solid State Physics of the Russian Academy of Sciences
Author for correspondence.
Email: maksimov@issp.ac.ru
Russia, 142432, Chernogolovka
E. V. Filatov
Institute of Solid State Physics of the Russian Academy of Sciences
Email: maksimov@issp.ac.ru
Russia, 142432, Chernogolovka
V. V. Filatov
Semenov Federal Research Center of Chemical Physics, Branch in Chernogolovka
Email: maksimov@issp.ac.ru
Russia, 142432, Chernogolovka
I. I. Tartakovskii
Institute of Solid State Physics of the Russian Academy of Sciences
Email: maksimov@issp.ac.ru
Russia, 142432, Chernogolovka
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