Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb 1 –  x  Gd  x  Te under the influence of electron paramagnetic resonance processes of Gd 3+  ions

V. A. Ulanov; Уланов В. А.; R. R. Zainullin; Зайнуллин Р. Р.; I. V. Yatsyk; Яцык И. В.; I. I. Fazlizhanov; Фазлижанов И. И.

doi:10.31857/S0367676523703076

Changes in the kinetic characteristics of free charge carriers in a narrow-gap semiconductor Pb_{1 – x}Gd_xTe under the influence of electron paramagnetic resonance processes of Gd³⁺ ions

Authors: Ulanov V.A.¹^,2, Zainullin R.R.¹, Yatsyk I.V.², Fazlizhanov I.I.²
Affiliations:
1. Kazan State Power Engineering University
2. Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of the Russian Academy of Sciences”
Issue: Vol 87, No 12 (2023)
Pages: 1781-1787
Section: Articles
URL: https://jdigitaldiagnostics.com/0367-6765/article/view/654540
DOI: https://doi.org/10.31857/S0367676523703076
EDN: https://elibrary.ru/QKALJV
ID: 654540

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Abstract
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Abstract

In crystals of the narrow-gap semiconductor Pb_{1 –} _xGd_xTe (x = 1.5 · 10^–4) at temperatures T = 5–100 K, the method of electron paramagnetic resonance (EPR) revealed unusual dependences of the line shape of the EPR spectra of paramagnetic Gd³⁺ centers on temperature and the microwave power level in the spectrometer cavity. Based on the results of the analysis of the shape parameters of resonance lines recorded in the X-band, it was concluded that the most probable cause of changes in the observed EPR spectra is the effect of resonance transitions between the spin levels of Gd³⁺ centers on the kinetic characteristics of free charge carriers bound by exchange interactions with Gd³⁺ ions.

Keywords

lead chalcogenide, narrow-gap semiconductor, electron paramagnetic resonance, Gd³⁺, EPR line shape

References

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