Efficiency of sub-THz – DC energy conversion of a silicon detector
- Authors: Shchepetilnikov A.V.1, Khisameeva A.R.1, Fedotova Y.V.1, Dryomin A.A.1, Kukushkin I.V.1
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Affiliations:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Issue: Vol 88, No 2 (2024)
- Pages: 180-184
- Section: New Materials and Technologies for Security Systems
- URL: https://jdigitaldiagnostics.com/0367-6765/article/view/654746
- DOI: https://doi.org/10.31857/S0367676524020025
- EDN: https://elibrary.ru/RTWKBX
- ID: 654746
Cite item
Abstract
The efficiency of sub-THz to DC energy conversion of a silicon-based plasmonic detector was studied. The dependence of the signal at the detector output on the incident radiation power was measured. In the power linear region, the coefficient η was shown to grow with increasing power and to saturate in the sub-linear regime. The maximum achieved values of η were 0.4% for the radiation frequency of 97 GHz. The measurements were carried out both at room temperature and when the detector was cooled to liquid nitrogen temperature.
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About the authors
A. V. Shchepetilnikov
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Author for correspondence.
Email: shchepetilnikov@issp.ac.ru
Russian Federation, Chernogolovka
A. R. Khisameeva
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Russian Federation, Chernogolovka
Ya. V. Fedotova
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Russian Federation, Chernogolovka
A. A. Dryomin
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Russian Federation, Chernogolovka
I. V. Kukushkin
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: shchepetilnikov@issp.ac.ru
Russian Federation, Chernogolovka
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