Photon echo on excitons for the development of nanoelectronic devices based on a quantum-size structures in a thin zinc oxide films

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Abstract

The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering have been studied. Echo signals are excited at a wavelength of 800 nm at transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures in the two-photon absorption mode of laser pulses with a wavelength of 800 nm.

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About the authors

I. I. Popov

Volga State Technological University

Author for correspondence.
Email: biht.orol@gmail.com
Russian Federation, Yoshkar-Ola

R. V. Yusupov

Kazan (Volga Region) Federal University

Email: biht.orol@gmail.com
Russian Federation, Kazan

A. V. Petrov

Kazan (Volga Region) Federal University

Email: biht.orol@gmail.com
Russian Federation, Kazan

A. R. Bessonov

Volga State Technological University

Email: biht.orol@gmail.com
Russian Federation, Yoshkar-Ola

A. M. Gaia

Volga State Technological University

Email: biht.orol@gmail.com
Russian Federation, Yoshkar-Ola

A. V. Moroz

Volga State Technological University

Email: biht.orol@gmail.com
Russian Federation, Yoshkar-Ola

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Supplementary files

Supplementary Files
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2. Fig. 1. Dependence of the decline in the average power of the primary photon echo signals on the time interval between the first and second excitation pulses for zinc oxide films: 800 (a), 600 (b) and 100 (c) nm thick

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3. Fig. 2. Dependence of the average power drop of the stimulated photon echo signals on the time interval between the second and third excitation pulses for 100 nm thick films differing in the width of the forbidden zone: zinc oxide (a); phosphorus-doped silicon (b); boron-doped silicon (c)

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