Modification of the implanted silicon surface by a powerful light pulse

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Abstract

We studied the possibility of modifying the near-surface silicon layer before and after ion implantation, followed by pulsed light annealing, in order to structure the surface of the substrates in order to increase the efficiency of their use in solar energy. The results were compared with the data obtained on monocrystalline and implanted germanium.

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About the authors

B. F. Farrakhov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Author for correspondence.
Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Russian Federation, Kazan

Ya. V. Fattakhov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Russian Federation, Kazan

A. L. Stepanov

Federal Research Center Kazan Scientific Center of Russian Academy of Sciences

Email: bulat_f@mail.ru

Zavoisky Physical-Technical Institute

Russian Federation, Kazan

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2. Fig. 1. Photographs of the surface of KDB-1 (111) silicon implanted with 50 keV P+ phosphorus ions at a dose of 3.12⋅1015 cm−2 through a 40 μm metal grid after pulsed light annealing on UOL.P-1 with power densities of 60 (a), 240 (b), 900 W⋅cm−2 (c) and durations of 3.5 (a), 750 (b), and 120 ms (c), respectively. Photographs of unimplanted KDB-1 (100) silicon after pulsed light annealing on UOL.P-1 with a power density of 1200 W⋅cm−2 and durations of 70 (d) and 90 ms (d) (the surface was polished before annealing).

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3. Fig. 2. Photographs of the surface of non-implanted silicon KDB-1 (100) (a), (111) (b, c) after pulsed light annealing on the Impulse-6 setup with a power density of 20 W⋅cm−2 and durations of 5 (a), 10 (b) and 15 s (c), respectively. Photographs of germanium implanted with Ag+ ions with an energy of 30 keV and a dose of 1.5⋅1017 cm−2, annealed with light pulses with a power density of 10 W⋅cm−2 and durations of 6 (d) and 4.5 s (d).

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