Thermally stimulated luminescence of colloidal InP/ZnS quantum dots

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Abstract

For the first time, spectrally resolved thermally stimulated luminescence in core/shell colloidal InP/ZnS quantum dots after exposure to UV radiation at 7 K is studied. Analysis of the measured luminescence spectra shows that the recombination of charge carriers localized under irradiation and released upon further stimulation occurs with the participation of defect centers based on dangling indium and phosphorus bonds. Using the initial growth method and the formalism of general-order kinetics, the kinetic features of possible thermally stimulated mechanisms are analyzed, and the energy characteristics of the corresponding capture centers are estimated. Active traps in the studied nanocrystals are found to be characterized by close activation energy values in the range of 25–29 meV.

About the authors

S. S Savchenko

NANOTECH Centre, Ural Federal University

Email: s.s.savchenko@urfu.ru
Yekaterinburg, Russia

A. S Vokhminsev

NANOTECH Centre, Ural Federal University

Yekaterinburg, Russia

I. A Weinstein

NANOTECH Centre, Ural Federal University; Institute of Metallurgy of the Ural Branch of the Russian Academy of Sciences

Yekaterinburg, Russia; Yekaterinburg, Russia

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