Мақаланы E-mail арқылы жіберу Nuclear scanning microprobe in the study of silicon carbide epilayers
- Авторлар: Buzoverya M.E.1, Karpov I.A.1, Arkhipov A.Y.1, Skvortsov D.A.2, Neverov V.A.2, Mamin B.F.2
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Мекемелер:
- Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
- National Research Ogarev Mordovia State University
- Шығарылым: Том 88, № 8 (2024)
- Беттер: 1287-1292
- Бөлім: Fundamental problems and applications of physics of atomic nucleus
- URL: https://jdigitaldiagnostics.com/0367-6765/article/view/676758
- DOI: https://doi.org/10.31857/S0367676524080201
- EDN: https://elibrary.ru/OPKVCM
- ID: 676758
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We presented the results of the study of surfaces of homoepitaxial 4H-SiC layers using a nuclear scanning microprobe in the Rutherford backscattering mode. Analysis of the state of the sample surfaces and synthesis modes showed that an increase in the silicon (Si) content in the upper layers of some samples precedes the formation of highly defective 4H-SiC layers.
Авторлар туралы
M. Buzoverya
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Ресей, Sarov, 607188
I. Karpov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Ресей, Sarov, 607188
A. Arkhipov
Russian Federal Nuclear Center — All-Russia Research Institute of Experimental Physics
Email: dismos51@gmail.com
Ресей, Sarov, 607188
D. Skvortsov
National Research Ogarev Mordovia State University
Хат алмасуға жауапты Автор.
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Ресей, Saransk, 430005V. Neverov
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Ресей, Saransk, 430005B. Mamin
National Research Ogarev Mordovia State University
Email: dismos51@gmail.com
Research Laboratory “Synthesis and Processing of Silicon Carbide Single Crystals”
Ресей, Saransk, 430005Әдебиет тізімі
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