Influence of parameters of crossbars with STT-MRAM on the accuracy of analog neural networks

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Рұқсат ақылы немесе тек жазылушылар үшін

Аннотация

Matrices of STT-MRAM cells assembled into a 3×3 crossbar architecture were studied. We experimentally found how the interconnect resistance affects the fidelity of the combined multiply-accumulate operations. The obtained results were compared with the simulation results in the CAD Cadence. The results of the work allow us to evaluate the contribution of the fidelity of performing combined multiply-accumulate operations, which must be considered when training analog neural networks.

Авторлар туралы

K. Kiseleva

Skolkovo Institute of Science and Technology; New Spintronic Technologies LLC

Email: ksenita.kiseleva@skoltech.ru
Skolkovo, Russia; Skolkovo, Russia

D. Cherkasov

New Spintronic Technologies LLC

Skolkovo, Russia

G. Kichin

New Spintronic Technologies LLC

Skolkovo, Russia

V. Antonov

Skolkovo Institute of Science and Technology

Skolkovo, Russia

K. Zvezdin

New Spintronic Technologies LLC

Skolkovo, Russia

Әдебиет тізімі

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