Dynamics of deposition and removal of a fluorocarbon film in the cyclic process of plasma-chemical etching of silicon
- 作者: Morozov O.V.1
-
隶属关系:
- Valiev Institute of Physics and Technology of the Russian Academy of Sciences, Yaroslavl Branch
- 期: 卷 88, 编号 4 (2024)
- 页面: 531-537
- 栏目: Ion-Surface Interactions
- URL: https://jdigitaldiagnostics.com/0367-6765/article/view/654697
- DOI: https://doi.org/10.31857/S0367676524040027
- EDN: https://elibrary.ru/QITUXF
- ID: 654697
如何引用文章
详细
In situ measurements of the dynamics of deposition and etching of a fluorocarbon film (FCF) during cyclic plasma-chemical etching of silicon using a laser interferometer have been carried out. Direct measurements of the deposition and etch rates, as well as the etch time of the FCF, open up new possibilities for optimizing the cycle procedure. For example, adjusting the etching time of the FCF improves the selectivity of the etching process.
作者简介
O. Morozov
Valiev Institute of Physics and Technology of the Russian Academy of Sciences, Yaroslavl Branch
编辑信件的主要联系方式.
Email: moleg1967@yandex.ru
俄罗斯联邦, Yaroslavl, 150007
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