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Control of the light polarization in ferromagnetic diode structures InGaAs/GaAs/δ-Mn
- Authors: Zaytsev S.V.1
-
Affiliations:
- Institute of Solid-State Physics of the Russian Academy of Sciences
- Issue: Vol 88, No 2 (2024)
- Pages: 236-240
- Section: New Materials and Technologies for Security Systems
- URL: https://jdigitaldiagnostics.com/0367-6765/article/view/654756
- DOI: https://doi.org/10.31857/S0367676524020125
- EDN: https://elibrary.ru/RROJAK
- ID: 654756
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Abstract
Electric-field influence on the polarization of the quantum well photoluminescence is studied in the diode structures InGaAs/GaAs/δ-Mn with narrow GaAs spacer dS = 2–5 nm at small magnetic field. Weakening of the circular polarization degree with increasing electric-field evidence about significant contribution of the stationary mechanism of the carriers’ polarization due to their exchange coupling with a nearby ferromagnetic δ-Mn-layer.
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About the authors
S. V. Zaytsev
Institute of Solid-State Physics of the Russian Academy of Sciences
Author for correspondence.
Email: szaitsev@issp.ac.ru
Russian Federation, Chernogolovka
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Supplementary files
Supplementary Files
Action
1.
JATS XML
2.
Fig. 1. Schematic of the n-GaAs/InGaAs/GaAs/δ-Mn/GaA diode structure (a). Example of calculation of the zone diagram of the structure #1 with a CNF and a high-density acceptor δ-Mn layer separated from it (b) (see details in [11])
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3.
Fig. 2. Circularly polarised FL spectra of structure #1 at B = 0.3 Tesla and external electric voltage Uext = 0, T = 2 K (a). Dependence of the degree of circular polarisation PC(Uext) for the CL line of structure #1 at Uext = 0 and T = 2 K (b)
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4.
Fig. 3. Dependences of the FL intensity on the external electric voltage Uext for all structures at T = 2 K and B = 0.3 Tesla (a). The arrows mark the features (see text). Dependences of the degree of circular polarisation PC(Uext) for the FL line in the field B = 0.3 Tesla (b). Straight lines for structures #1 and #2 are the results of linear approximation
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